Toshiba SLC NAND flash memory features embedded ECC

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Toshiba Corp has expanded its memory portfolio with the release of BENAND, a versatile, multi-application single level cell (SLC) NAND flash memory that features an embedded error correction code (ECC).

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BENAND is suitable for LCD TVs, digital cameras, robots and other industrial applications. Two samples of eight BENAND products in two capacities – 4Gb and 8Gb – is now available, with mass production to follow from March 2012.

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Until now, the ECC has been embedded in the host processor and corrected 1 bit per 512 bytes. However, advances in memory process technology require enhanced error correction; more than 4 bit correction per 512 bytes for NAND flash fabricated with 32nm process. For NAND flash memory without ECC fabricated with 32nm and beyond, the controller in the host processor must be changed to secure the required level of correction.

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Toshiba’s BENAND removes the burden of ECC from the host processor while minimizing protocol changes and allowing host processors to support leading-edge process NAND flash memory in a timely manner. BENAND embeds an ECC with an error correction of 4 bit per 512 bytes onto Toshiba’s cutting-edge 32nm process SLC NAND flash memory. Package and pin configuration compatibility are assured with general SLC NAND flash, allowing easy replacement of existing products.

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Toshiba plans to expand the BENAND lineup to include 24nm process NAND flash memory products after summer 2012.

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